P-N Junction

P-N Junction

. If the hostel of Germanium or silicon is growth in such a way that its one half is dropped with the revenant imperative and the other half is doped with pencil and in polity, junction is forward. in n type material, the majority charge Carriers are electrons while in p type material, the majority change Carriers are holes. the electrons diffuse in p type material just after the formation of PN junction. so I charge left region is formed around the junction.
. Which contains no charge carriers. this region is now as depletion region. in figure, dots present the electrons and circle the represent the whole. when have the circle with we add - ve signals shows the positive and negative ions which constitutes the depletion region. due to charge on the iron is a potential difference across the deputation region.
. Which stops the further diffusion of electrons and holes. this potential difference is called a potential barrier. the value of the potential barrier for G is 0.3 volts while for SI is 0.7 volts. if the battery of EMF is connected across a p-n Junction, then junction is said to be based Junction. the basic of a Junction can be done into two ways.
. Forward biased PN junction. reverse biased PN junction. forward biased PN junction. when an eternal potential is applied across the PN junction in such a way that positive terminal of the battery is connected with p-type and its negative terminal is connected to the and type, the PN junction is said to be forward based.
. Show the eternal potential difference supplies the energy to free the electrons in n-type region and two holes in the p-type region. when the energy is sufficient to overcome the potential barrier. the current may be of the order of few milliamperes begins to flow across PN junction. show the PN junction is said to forward based.
. We can draw the graph between current and voltage for forward basing up Si, as shown in the figure. forward based resistance dynamic resistance. the reciprocal of the slope represents the forward-based resistance. it is the resistance offered by the p-n junction when it is confusing. the value of Forwarding resistance is only a few or harms.
. When an external potential is applied across the PN junction in such a way that positive terminal of the battery is connected with and type while negative terminal is connected with p-type, then the PN junction is said to be revised best. in this case, no current will slow due to majority charge.
. However, a very small current. in my Chrome page flows across due to follow of minerals minority charge carriers. which is called revise current or leakage current.